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術語表

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  • Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
  • 受主 - 一種用來在半導體中形成空穴的元素,比如硼、銦和鎵。受主原子必須比半導體元素少一價電子
  • Alignment Precision - Displacement of patterns that occurs during the photolithography process.
  • 套準精度 - 在光刻工藝中轉移圖形的精度。
  • Anisotropic - A process of etching that has very little or no undercutting
  • 各向異性 - 在蝕刻過程中,只做少量或不做側向凹刻。
  • Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
  • 沾污區域 - 任何在晶圓片表面的外來粒子或物質。由沾污、手印和水滴產生的污染。
  • Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
  • 橢圓方位角 - 測量入射面和主晶軸之間的角度。
  • Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
  • 背面 - 晶圓片的底部表面。(注:不推薦該術語,建議使用“背部表面”)
  • Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
  • 底部硅層 - 在絕緣層下部的晶圓片,是頂部硅層的基礎。
  • Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
  • 雙極晶體管 - 能夠采用空穴和電子傳導電荷的晶體管。
  • Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
  • 綁定晶圓片 - 兩個晶圓片通過二氧化硅層結合到一起,作為絕緣層。
  • Bonding Interface - The area where the bonding of two wafers occurs.
  • 綁定面 - 兩個晶圓片結合的接觸區。
  • Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
  • 埋層 - 為了電路電流流動而形成的低電阻路徑,攙雜劑是銻和砷。
  • Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
  • 氧化埋層(BOX) - 在兩個晶圓片間的絕緣層。
  • Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
  • 載流子 - 晶圓片中用來傳導電流的空穴或電子。
  • Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
  • 化學-機械拋光(CMP) - 平整和拋光晶圓片的工藝,采用化學移除和機械拋光兩種方式。此工藝在前道工藝中使用。
  • Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
  • 卡盤痕跡 - 在晶圓片任意表面發現的由機械手、卡盤或托盤造成的痕跡。
  • Cleavage Plane - A fracture plane that is preferred.
  • 解理面 - 破裂面
  • Crack - A mark found on a wafer that is greater than 0.25 mm in length.
  • 裂紋 - 長度大于0.25毫米的晶圓片表面微痕。
  • Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
  • 微坑 - 在擴散照明下可見的,晶圓片表面可區分的缺陷。
  • Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
  • 傳導性(電學方面) - 一種關于載流子通過物質難易度的測量指標 。
  • Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
  • 導電類型 - 晶圓片中載流子的類型,N型和P型。
  • Contaminant, Particulate (see light point defect)
  • 污染微粒 (參見光點缺陷)
  • Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
  • 沾污區域 - 部分晶圓片區域被顆粒沾污,造成不利特性影響。
  • Contamination Particulate - Particles found on the surface of a silicon wafer.
  • 沾污顆粒 - 晶圓片表面上的顆粒。
  • Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
  • 晶體缺陷 - 部分晶體包含的、會影響電路性能的空隙和層錯。
  • Crystal Indices (see Miller indices)
  • 晶體指數 (參見米勒指數)
  • Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
  • 耗盡層 - 晶圓片上的電場區域,此區域排除載流子。
  • Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
  • 表面起伏 - 在合適的光線下通過肉眼可以發現的晶圓片表面凹陷。
  • Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
  • 施主 - 可提供“自由”電子的攙雜物,使晶圓片呈現為N型。
  • Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
  • 攙雜劑 - 可以為傳導過程提供電子或空穴的元素,此元素可以改變傳導特性。晶圓片攙雜 劑可以在元素周期表的III 和 V族元素中發現。
  • Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
  • 摻雜 - 把攙雜劑摻入半導體,通常通過擴散或離子注入工藝實現。
  • Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
  • 芯片邊緣和縮進 - 晶片中不完整的邊緣部分超過0.25毫米。
  • Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
  • 邊緣排除區域 - 位于質量保證區和晶圓片外圍之間的區域。(根據晶圓片的尺寸不同而有所不同。)
  • Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
  • 名義上邊緣排除(EE) - 質量保證區和晶圓片外圍之間的距離。
  • Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
  • 邊緣輪廓 - 通過化學或機械方法連接起來的兩個晶圓片邊緣。
  • Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
  • 蝕刻 - 通過化學反應或物理方法去除晶圓片的多余物質。
  • Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
  • 質量保證區(FQA) - 晶圓片表面中央的大部分。
  • Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
  • 平邊 - 晶圓片圓周上的一個小平面,作為晶向定位的依據。
  • Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
  • 平口直徑 - 由小平面的中心通過晶圓片中心到對面邊緣的直線距離。
  • Four-Point Probe - Test equipment used to test resistivity of wafers.
  • 四探針 - 測量半導體晶片表面電阻的設備。
  • Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
  • 爐管和熱處理 - 溫度測量的工藝設備,具有恒定的處理溫度。
  • Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
  • 正面 - 晶圓片的頂部表面(此術語不推薦,建議使用“前部表面”)。
  • Goniometer - An instrument used in measuring angles.
  • 角度計 - 用來測量角度的設備。
  • Gradient, Resistivity (not preferred; see resistivity variation)
  • 電阻梯度 (不推薦使用,參見“電阻變化”)
  • Groove - A scratch that was not completely polished out.
  • 凹槽 - 沒有被完全清除的擦傷。
  • Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
  • 手工印記 - 為區分不同的晶圓片而手工在背面做出的標記。
  • Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
  • 霧度 - 晶圓片表面大量的缺陷,常常表現為晶圓片表面呈霧狀。
  • Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
  • 空穴 - 和正電荷類似,是由缺少價電子引起的。
  • Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
  • 晶錠 - 由多晶或單晶形成的圓柱體,晶圓片由此切割而成。
  • Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
  • 激光散射 - 由晶圓片表面缺陷引起的脈沖信號。
  • Lay - The main direction of surface texture on a wafer.
  • - 晶圓片表面結構的主要方向。
  • Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
  • 光點缺陷(LPD) (不推薦使用,參見“局部光散射”)
  • Lithography - The process used to transfer patterns onto wafers.
  • 光刻 - 從掩膜到圓片轉移的過程。
  • Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
  • 局部光散射 - 晶圓片表面特征,例如小坑或擦傷導致光線散射,也稱為光點缺陷。
  • Lot - Wafers of similar sizes and characteristics placed together in a shipment.
  • 批次 - 具有相似尺寸和特性的晶圓片一并放置在一個載片器內。
  • Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
  • 多數載流子 - 一種載流子,在半導體材料中起支配作用的空穴或電子,例如在N型中是電子。
  • Mechanical Test Wafer - A silicon wafer used for testing purposes.
  • 機械測試晶圓片 - 用于測試的晶圓片。
  • Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
  • 微粗糙 - 小于100微米的表面粗糙部分。
  • Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
  • Miller索指數 - 三個整數,用于確定某個并行面。這些整數是來自相同系統的基本向量。
  • Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
  • 最小條件或方向 - 確定晶圓片是否合格的允許條件。
  • Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
  • 少數載流子 - 在半導體材料中不起支配作用的移動電荷,在P型中是電子,在N型中是空穴。
  • Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
  • 堆垛 - 晶圓片表面超過0.25毫米的缺陷。
  • Notch - An indent on the edge of a wafer used for orientation purposes.
  • 凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。
  • Orange Peel - A roughened surface that is visible to the unaided eye.
  • 桔皮 - 可以用肉眼看到的粗糙表面
  • Orthogonal Misorientation -
  • 直角定向誤差 -
  • Particle - A small piece of material found on a wafer that is not connected with it.
  • 顆粒 - 晶圓片上的細小物質。
  • Particle Counting - Wafers that are used to test tools for particle contamination.
  • 顆粒計算 - 用來測試晶圓片顆粒污染的測試工具。
  • Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
  • 顆粒污染 - 晶圓片表面的顆粒。
  • Pit - A non-removable imperfection found on the surface of a wafer.
  • 深坑 - 一種晶圓片表面無法消除的缺陷。
  • Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
  • 點缺陷 - 不純凈的晶缺陷,例如格子空缺或原子空隙。
  • Preferential Etch -
  • 優先蝕刻 -
  • Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
  • 測試晶圓片 - 影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶圓片。對于具體應用該晶圓片有嚴格的要求,但是要比主晶圓片要求寬松些。
  • Primary Orientation Flat - The longest flat found on the wafer.
  • 主定位邊 - 晶圓片上最長的定位邊。
  • Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.
  • 加工測試晶圓片 - 用于區域清潔過程中的晶圓片。
  • Profilometer - A tool that is used for measuring surface topography.
  • 表面形貌劑 - 一種用來測量晶圓片表面形貌的工具。
  • Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
  • 電阻率(電學方面) - 材料反抗或對抗電荷在其中通過的一種物理特性。
  • Required - The minimum specifications needed by the customer when ordering wafers.
  • 必需 - 訂購晶圓片時客戶必須達到的最小規格。
  • Roughness - The texture found on the surface of the wafer that is spaced very closely together.
  • 粗糙度 - 晶圓片表面間隙很小的紋理。
  • Saw Marks - Surface irregularities
  • 鋸痕 - 表面不規則。
  • Scan Direction - In the flatness calculation, the direction of the subsites.
  • 掃描方向 - 平整度測量中,局部平面的方向。
  • Scanner Site Flatness -
  • 局部平整度掃描儀 -
  • Scratch - A mark that is found on the wafer surface.
  • 擦傷 - 晶圓片表面的痕跡。
  • Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
  • 第二定位邊 - 比主定位邊小的定位邊,它的位置決定了晶圓片的類型和晶向。
  • Shape -
  • 形狀 -
  • Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
  • 局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區域。
  • Site Array - a neighboring set of sites
  • 局部表面系列 - 一系列的相關局部表面。
  • Site Flatness -
  • 局部平整 -
  • Slip - A defect pattern of small ridges found on the surface of the wafer.
  • 劃傷 - 晶圓片表面上的小皺造成的缺陷。
  • Smudge - A defect or contamination found on the wafer caused by fingerprints.
  • 污跡 - 晶圓片上指紋造成的缺陷或污染。
  • Sori -
  • Striation - Defects or contaminations found in the shape of a helix.
  • 條痕 - 螺紋上的缺陷或污染。
  • Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
  • 局部子表面 - 局部表面內的區域,也是矩形的。子站中心必須位于原始站點內部。
  • Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
  • 表面紋理 - 晶圓片實際面與參考面的差異情況。
  • Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
  • 測試晶圓片 - 用于生產中監測和測試的晶圓片。
  • Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
  • 頂部硅膜厚度 - 頂部硅層表面和氧化層表面間的距離。
  • Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
  • 頂部硅膜 - 生產半導體電路的硅層,位于絕緣層頂部。
  • Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
  • 總計指示劑數(TIR) - 晶圓片表面位面間的最短距離。
  • Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
  • 原始測試晶圓片 - 還沒有用于生產或其他流程中的晶圓片。
  • Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
  • 無效 - 在應該綁定的地方沒有綁定(特別是化學綁定)。
  • Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
  • 波浪 - 晶圓片表面通過肉眼能發現的彎曲和曲線。
  • Waviness - Widely spaced imperfections on the surface of a wafer.
  • 波紋 - 晶圓片表面經常出現的缺陷。

   
   
 

敬告用戶:因我司生產的測試儀器在行業的知名度顯著,最近市場上出現假冒偽劣或山寨我司的產品,部分冒牌的儀器上甚至冒用我司”廣州四探針科技有限公司“和“四探針科技”的名稱,有的廠家有意或者無意間在公司介紹中暗示帶有“四探針科技”的名稱www.welove51.com是我司唯一的官方網址,我司從來沒有注冊過以任何4probes其它后綴的域名網址,有的廠家為了混淆視聽,注冊了以4probes為后綴的其它網址。甚至有的廠家還以我司生產的產品型號RTS-8四探針測試儀、RTS-9雙電測四探針測試儀等暢銷的產品型號在搜索平臺作為關鍵字進行推廣,然后指向他們的網站。請各大用戶注意,如果用戶是通過中間商購買我司產品的,最好來電我司咨詢此中間商是否為我司授權的經銷商,已購買儀器的用戶可來電我司進行核實。對于相關公司生產冒牌我司產品帶來侵犯我司名稱、商標、知識產權的產品,我司將追究其違法、違規相關的經濟和法津責任。

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